Title of article
Evidence for type I band alignment in GaNAs/GaAs quantum structures by optical spectroscopies
Author/Authors
I.A. Buyanova، نويسنده , , G. Pozina، نويسنده , , P.N. Hai، نويسنده , , W.M. Chen، نويسنده , , H.P. Xin، نويسنده , , C.W. Tu، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
1074
To page
1077
Abstract
Type I band line-up in GaNxAs1−x/GaAs multiple quantum wells (MQW) with x⩽3% is concluded based on the following experimental results: (i) a comparable radiative decay time of the GaNAs-related photoluminescence (PL) measured from single GaNAs epilayers and the GaNAs/GaAs MQW structures, (ii) the observed PL polarization, and (iii) the spatial confinement of photoexcited holes within the GaNAs layers under resonant excitation of the GaNAs MQW.
Keywords
GaNAs , Electronic structure , Band alignment
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050486
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