Title of article
Shape induced anisotropic elastic relaxation in InP/In0.48Ga0.52P quantum dots
Author/Authors
M. Schmidbauer، نويسنده , , M. Hanke، نويسنده , , F. Hatami، نويسنده , , William P. Schafer، نويسنده , , H. Raidt، نويسنده , , D. Grigoriev، نويسنده , , T. Panzner، نويسنده , , W.T Masselink، نويسنده , , R. Kohler، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
1139
To page
1142
Abstract
We report on free-standing InP quantum dots grown on (0 0 1) InGaP/GaAs which exhibit a pronounced size anisotropy with respect to the [110] and [View the MathML source] directions. X-ray diffuse scattering together with respective kinematical simulations using elasticity theory makes it possible to determine with high accuracy the geometric aspect ratios of island height and island base widths. The influence of these ratios on the strain field inside the quantum dots will be discussed.
Keywords
X-ray diffuse scattering , Shape anisotropy , InP quantum dots
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050501
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