Title of article :
Two modes of Ga diffusion into InAs self-assembled quantum dots suggested by ion channeling
Author/Authors :
N Matsumura، نويسنده , , T Haga، نويسنده , , S Muto، نويسنده , , Y Nakata، نويسنده , , N Yokoyama، نويسنده , , K Numata، نويسنده , , K Yabuta، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
4
From page :
1168
To page :
1171
Abstract :
InAs self-assembled quantum dots (SAQDs) is structurally investigated as a function of growth interruption time from 0 to View the MathML source. Deformation of In increased as growth interruption time increased. Also, a strong correlation between the In deformation and photoluminescence (PL) peak wavelength was found. Deformation of Ga was reduced when the growth interruption time was changed from 0 to View the MathML source, increased from 30 to View the MathML source and saturated beyond View the MathML source. These results suggest a presence of two different mechanisms of Ga diffusion into QDs.
Keywords :
Ga diffusion , Quantum dots , Ion channeling , Self-assembly
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2002
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050508
Link To Document :
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