Extremely flat growth-interrupted InAlAs surface grown on a (4 1 1)A-oriented InP substrate by molecular beam epitaxy

We investigated flatness of growth-interrupted InAlAs and InGaAs surfaces using In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) with well widths (Lw) of 0.6–View the MathML source grown on a View the MathML source-oriented InP substrate by molecular beam epitaxy. In the View the MathML source QWs with growth interruption (GI) at the InGaAs/InAlAs interface (InAlAs surface), full width at half maximum (FWHM) of a photoluminescence peak of the 1.2-nm-thick InGaAs well was as narrow as View the MathML source, which was almost the same as that of the corresponding well without GI (View the MathML source). On the other hand, the FWHM of the (100) QWs with GI at the InAlAs surface was View the MathML source (View the MathML source), which was 55% larger than that of the View the MathML source QWs with GI at the InAlAs surface. This result indicates that the effectively atomically flat interfaces [View the MathML source super-flat interfaces] are successfully kept in spite of introducing GI, while GI makes the (100) interface much rough.