Type II broken band heterostructure quantum dot to obtain a material for the intermediate band solar cell

This paper introduces the idea of achieving an intermediate band solar cell using a three-dimensional array of type II broken gap quantum dots. The determining factor is that electrons and holes must be confined in different and adjacent quantum dots. The overlap between bounded states of the adjacent quantum dots induces a half-filled intermediate band and three separate quasi-Fermi levels for describing, in non-equilibrium conditions, the carrier concentration in the valence, intermediate and conduction bands. InAs/GaSb could be an adequate material system for manufacturing the array of dots.