Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals

Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at View the MathML source and at temperatures up to View the MathML source. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of View the MathML source between 4 and View the MathML source.