Electroluminescence from thin SiO2 layers after Si- and C-coimplantation

In this paper we explore the electroluminescence (EL) properties of thermally grown View the MathML source thick SiO2 layers co-implanted with Si+ and C+ ions. The implanted fluences were chosen in such a way that peak concentrations of excess Si and C of 5–View the MathML source were achieved. The devices show a broad photoluminescence (PL) between 2.0 and View the MathML source with a main peak around View the MathML source. The broad EL spectra show additional peaks around View the MathML source and between 2.1 and View the MathML source which are decreased with increasing Si/C concentration. The shape of the EL spectra does not change with increasing injection currents which implies that various types of defects occur for the different concentrations. The device stability is improved in comparison to Ge or Sn implanted oxide layers.