grown by MBE

Effect of lower growth temperature Ts on C incorporation to substitutional sites in View the MathML source grown by molecular beam epitaxy was investigated. To enhance the non-equilibrium growth condition, the temperature Ts was lowered from 600°C down to 300°C. The C incorporation into substitutional sites of GeC epilayers was very sensitive to Ts. X-ray diffraction (XRD) measurement indicated that the substitutional C composition x increased with decrease in Ts from 600°C to 400°C. At Ts⩽350°C, the estimation of x by the XRD analysis was impossible because of polycrystallization. The Raman shift measurement enables to estimate x for Ts⩽350°C, as consequently larger x than that grown at Ts=400°C was verified. The enhancement of non-equilibrium growth condition by decreasing Ts was important to increase x.