Non-pixeled amorphous silicon-based image sensors

Large area hydrogenated amorphous silicon p–i–n structures with low conductivity doped layers were proposed as single element monochrome image sensors. The investigation of the sensor output under different scanner wavelengths and varying electrical bias reveals that the response can be tuned to a certain wavelength, thus enabling color separation. The measurement technique is described in detail and two methods for color separation are proposed. The sensor output characteristics are evaluated under different bias voltages and wavelengths. The color separation mechanism can be explained by the variation of the band bending with light wavelength.The operation of the sensor is exemplified under illumination with a polychromatic image and using one of the proposed detection methods.