Shot noise in diffusive SNS and SIN junctions Pages 17-18 Francois Lefloch, Christian Hoffmann, David Quirion, Marc Sanquer Show preview | Purchase PDF - $39.95 | Recommended articles | Related reference work articles

We studied shot noise in metallic SNS and doped silicon-based SIN junctions. In SNS structures, the shot noise is very much enhanced due to incoherent multiple Andreev reflections (IMAR) which are truncated, at low voltages, by inelastic electron–electron interaction. These experimental results show good agreement with recent semiclassical theory. In SIN junctions, the zero-voltage conductance is increased by disorder-induced coherent MAR (reflectionless tunneling) and we found that the shot noise is double (SI=4eI) below the Thouless energy and equals the full shot noise (SI=2eI) above. We also present conductance measurements which show the same zero bias anomaly but in a double-barrier metallic SININ junction.