Rectifying diode made of individual gallium nitride nanowire

We have fabricated a Schottky-junction diode, utilizing gallium nitride (GaN) nanowire, and studied its electrical transport properties. Two kinds of metal electrodes, Al and Ti/Au, were incorporated into an individual GaN nanowire synthesized by chemical vapor deposition method. A Schottky-barrier junction was formed in the Al electrode while ohmic contact was formed in the Ti/Au electrode. The measured current–voltage characteristic exhibited clear rectifying behavior and no reverse bias breakdown was observed up to the measured voltage, View the MathML source.