Electronic transport in a 3-D network of 1-D Bi and Te-doped Bi quantum wires

The resistance (R) and transverse magnetoresistance (TMR) of a high density network of View the MathML source diameter wires of Bi and Bi doped with 0.14% Te in porous Vycor glass were measured. For pure Bi R increases as T decreases from 300 to View the MathML source. Below View the MathML source a sharp upturn in the resistance is observed; the order of magnitude of the resistance rise and the behavior of the MR are consistent with localization and electron–electron interaction theories of a one-dimensional disordered conductor in the presence of strong spin–orbit scattering. Addition of Te, which modifies the carrier density and scattering, reduces this resistivity increase, while the magnitude of the magnetoresistance is substantially enhanced.