Disorder and its effect on the electron tunneling and hopping transport in semiconductor superlattices

In this work, we study theoretically vertical electron transport in semiconductor superlattices subject to an electric field. A disorder is introduced into the layer parameters. Both, disordered superlattices with a strong electron scattering and those with a weak scattering, are considered at low temperatures. The interwell hopping transport is simulated for the former structures, and the tunneling approach is adopted for the latter superlattices. In both models the current–voltage characteristics are calculated for various types and degrees of the disorder. The superlattice transport properties can be controlled by the disorder.