Localized phonon-assisted electron tunneling in DBRT structure in quantizing magnetic field

A theory of confined and interface optical phonon-assisted electron tunneling in GaAs/AlAs double barrier resonant tunneling structure in the presence of quantizing magnetic field is developed. The excess current is calculated employing transfer matrix method. Electron interaction with confined LO phonons described by Huang and Zhu, slab mode and guided mode models is considered. The effect of interface modes is also incorporated. Numerical results obtained, based on Huang and Zhu model, are in conformity with experimental observations.