Title of article
A 40 nm body-tied FinFET (OMEGA MOSFET) using bulk Si wafer
Author/Authors
Tai-su Park، نويسنده , , Euijoon Yoon، نويسنده , , Jong-Ho Lee، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
7
From page
6
To page
12
Abstract
A new body-tied FinFET is proposed and fabricated on bulk Si wafer instead of SOI wafer. Three-dimensional device simulations show the characteristics of the proposed device and show that it can be implemented without deteriorating short channel effect. An active fin width of 25–View the MathML source and a gate length of View the MathML source were realized by using sidewall spacer technology.
Keywords
Nano , DG-MOSFET , FinFET , MOSFET , Body-tied , Bulk Si wafer
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050804
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