A 40 nm body-tied FinFET (OMEGA MOSFET) using bulk Si wafer

A new body-tied FinFET is proposed and fabricated on bulk Si wafer instead of SOI wafer. Three-dimensional device simulations show the characteristics of the proposed device and show that it can be implemented without deteriorating short channel effect. An active fin width of 25–View the MathML source and a gate length of View the MathML source were realized by using sidewall spacer technology.