Two-dimensional quantum mechanical simulation of electron transport in nano-scaled Si-based MOSFETs

As the transistor dimensions scale down below the View the MathML source regime, the reliability of semiclassical models of transport decreases. To offer additional insight into transport phenomena in these deeply scaled devices, simulation tools that treat non-local quantum transport and confinement effects without sacrificing the realistic treatment of scattering are needed. A unique non-equilibrium Greenʹs function approach “Schrödinger equation Monte-Carlo” (SEMC) provides a physically rigorous approach to quantum transport and phase-breaking inelastic scattering via real (actual) scattering processes such as optical and acoustic phonon scattering. “One-dimensional” SEMC codes previously have been applied to model transport in systems such as quantum well lasers where the potential varies only along the nominal direction of transport, although with a fully three-dimensional (3D) treatment of scattering. In this paper, the development of a version of “SEMC-2D” code for electrostatically self-consistent treatment of quantum transport within devices with, additionally, quantum confinement normal to the direction of transport, is reported along with illustrative simulation results for nano-scaled SOI MOSFETs geometries.