Title of article
Magneto-conductance fluctuations in a V-grooved GaAs quantum-wire
Author/Authors
T. Sugaya، نويسنده , , C.-K. Hahn، نويسنده , , M. Ogura، نويسنده , , A. Sato، نويسنده , , J.P. Bird، نويسنده , , D.K. Ferry، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
5
From page
102
To page
106
Abstract
We study the magneto-resistance of a V-grooved GaAs quantum-wire field-effect transistor (QWR-FET) realized by selective growth of metalorganic vapor phase epitaxy. At low temperatures, the magneto-resistance of the wire shows reproducible fluctuations resulting from the quantum interference of electrons in the wire. The gate-voltage and temperature dependence of the conductance fluctuations are studied, and the latter reveal evidence for the robust phase coherence of electrons in the V-grooved QWR.
Keywords
Low-dimensional structures , Nanostructures , Magneto-resistance , Selective epitaxy , Conductance fluctuations , Metalorganic vapor phase epitaxy
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050821
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