Title of article
Millisecond fluorescence in InAs quantum dots embedded in AlAs
Author/Authors
T.S. Shamirzaev، نويسنده , , A.M. Gilinsky، نويسنده , , A.I. Toropov، نويسنده , , A.K. Bakarov، نويسنده , , D.A Tenne، نويسنده , , K.S Zhuravlev، نويسنده , , C von Borczyskowski، نويسنده , , D.R.T. Zahn، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
4
From page
282
To page
285
Abstract
The temperature dependence of steady-state and time-resolved photoluminescence from self-assembled InAs quantum dots embedded in AlAs has been studied. Millisecond-long nonexponential photoluminescence decay is observed in the temperature range of 4.2–View the MathML source. At higher temperatures, the decay time decreases to a few nanoseconds. The experimental results are interpreted using a model of singlet–triplet splitting of exciton levels in small dots in a dense quantum dot system with local carrier transfer between dots.
Keywords
Singlet–triplet splitting , Self-assembled quantum dots , Excitons , Photoluminescence
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050889
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