Author/Authors :
T. Wojtowicz، نويسنده , , W.L. Lim، نويسنده , , X. Liu، نويسنده , , G. Cywi?ski، نويسنده , , M. Kutrowski، نويسنده , , L.V. Titova، نويسنده , , K. Yee، نويسنده , , M. Dobrowolska، نويسنده , , J.K Furdyna، نويسنده , , K.M. Yu، نويسنده , , W. Walukiewicz، نويسنده , , G.B. Kim، نويسنده , , M. Cheon، نويسنده , , X. Chen، نويسنده , , S.M. Wang، نويسنده , , H. Luo، نويسنده , , I. Vurgaftman، نويسنده , , J.R. Meyer-Fernandes، نويسنده ,
Abstract :
We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In1−xMnxSb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In1−xMnxSb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to View the MathML source, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.
Keywords :
Ferromagnetic semiconductors , Anomalous Hall effect , Magnetization , Magneto-optical Kerr effect , RBS , PIXE , Magnetic circular dichroism , InMnSb
