• Title of article

    Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

  • Author/Authors

    Junsaku Nitta، نويسنده , , Yiping Lin، نويسنده , , Takaaki Koga، نويسنده , , Tatsushi Akazaki، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    429
  • To page
    432
  • Abstract
    We report on electron g-factor in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.
  • Keywords
    InAs-inserted InGaAs/InAlAs heterostructure , Shubnikov-de Hass oscillations , Coincidence method , g-factor
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2003
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1050917

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1050917