Novel mid-IR laser based on hybrid AlGaAsSb/InAs/CdMgSe heterostructure

We report on the development of a novel design of a mid-IR laser combining III–V and II–VI compounds in a “hybrid” double heterostructure. It possesses large View the MathML source potential barriers both for injected electrons and holes, suppressing their leakage from the active region, and provides strong optical confinement. An AlGaAsSb/InAs/CdMgSe laser diode with a III–V/II–VI heterovalent interface at the View the MathML source-InAs active region has been grown by molecular beam epitaxy on an InAs substrate. Despite a far from optimal defect density at the CdMgSe/InAs interface and high losses inherent for bulk active region of the laser, the structure demonstrates lasing at View the MathML source (up to View the MathML source) in the pulsed regime with a threshold current density of View the MathML source. Type II InSb monolayer insertions into an InAs layer show bright photoluminescence at View the MathML source), confirming the great potential of the InAs-based nanostructure active region for longer wavelength applications.