Title of article :
GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm
Author/Authors :
M. Grau، نويسنده , , C. Lin، نويسنده , , O. Dier، نويسنده , , M.-C. Amann، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Abstract :
Compressively strained multiple quantum well lasers in the GaInAsSb/AlGaAsSb material system are reported. Indium concentrations between 40% and 47.5% were chosen for the GaInAsSb quantum wells. Compressive strains varied between 1.16% and 1.43%. The lasers worked continuous wave at room temperature up to a wavelength of View the MathML source. For a laser with View the MathML source wavelength continuous wave operation was found up to a temperature of −23°C. This laser worked in pulsed operation at 15°C.
Keywords :
Mid-infrared lasers , Antimonide-based lasers
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures