Optically pumped lead chalcogenide infrared emitters on silicon substrates

Two low cost-infrared sources emitting above View the MathML source wavelength are described: (i) Double heterostructure or quantum well EuSe/PbSe/Pb1−xEuxSe edge emitting lasers on silicon substrates show peak powers up to View the MathML source and differential quantum efficiencies up to 20%. They operate up to View the MathML source when pumped with View the MathML source laser diodes (with peak powers of View the MathML source). (ii) A “wavelength transformer”, a EuSe/PbSe/Pb1−xEuxSe active resonant cavity with epitaxial bottom and top mirror on a Si(1 1 1) substrate transforms the incoming View the MathML source pump radiation into e.g. View the MathML source wavelength. The device operates at room temperature, and the width and value of the emission wavelength can be tuned by design.