• Title of article

    UP-conversion of terahertz radiation induced by photon drag effect

  • Author/Authors

    Volodymyr Malyutenko، نويسنده , , Vitalii Borblik، نويسنده , , Victor Vainberg، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    563
  • To page
    566
  • Abstract
    An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrared (IR, peak wavelength λ2) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at View the MathML source and moderate THz intensity (∼kW/cm2) show that this up-conversion process (with λ1/λ2>102) can be observed with a conventional thermal imaging camera.
  • Keywords
    Narrow-gap semiconductors , Photon drag , Terahertz detection , Negative luminescence , Up-conversion
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2003
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1050945