Title of article :
Long-wavelength luminescence from GaSb quantum dots grown on GaAs substrates
Author/Authors :
Makoto Kudo، نويسنده , , Tomoyoshi Mishima، نويسنده , , Satoshi Iwamoto، نويسنده , , Toshihiro Nakaoka، نويسنده , , Yasuhiko Arakawa، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
4
From page :
275
To page :
278
Abstract :
Self-assembled GaSb quantum dots (QDs) with a photoluminescence wavelength longer than View the MathML source were successfully grown by suppressing the replacement of As and Sb on the surface of the GaSb QDs. This result means that GaSb can thus join InAs or GaInAs as a suitable material for QD lasers for optical communications.
Keywords :
Molecular beam epitaxy , GaSb , Quantum dots , Photoluminescence
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2004
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050969
Link To Document :
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