Title of article
Charging effects of ErAs islands embedded in AlGaAs heterostructures
Author/Authors
A. Dorn، نويسنده , , M. Peter، نويسنده , , S. Kicin، نويسنده , , T. Ihn، نويسنده , , K. Ensslin، نويسنده , , D. Driscoll، نويسنده , , A.C. Gossard، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
426
To page
429
Abstract
Self-assembled ErAs islands were grown on GaAs between a two-dimensional electron gas (2DEG) and a backgate electrode by molecular-beam epitaxy. The islands have overlapping Schottky barriers that form an insulating potential barrier. A TiAu topgate was added by shadow mask evaporation. Thermal activation and charging experiments were employed to gain insight into the electronic properties of the ErAs island systems. In addition the 2DEG was characterized as a function of topgate and backgate voltage.
Keywords
ErAs , Backgate , GaAs , Heterostructure
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051002
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