Transport measurements through stacked InAs self-assembled quantum dots in time domain

We report electronic characterization of stacked InAs self-assembled quantum dots (SAQDs) embedded in GaAs, using ultra-short pulses. Electrical pulse trains with the width ranging from 50 to View the MathML source were applied on the waveguide-type top electrode and the average substrate current was monitored. The current showed staircases and oscillatory features as a function of the pulse width. The staircase could represent single electron injection into SAQDs and the observed oscillatory features could be related with temporal change of electronic occupation in quantum states of SAQDs.