Author/Authors :
J.H. Rice، نويسنده , , R.A Oliver، نويسنده , , J.W Robinson، نويسنده , , J.D. Smith، نويسنده , , R.A. Taylor، نويسنده , ,
G.A.D. Briggs، نويسنده , , M.J. Kappers، نويسنده , , C.J. Humphreys، نويسنده , , S Yasin، نويسنده ,
Abstract :
A novel method for the growth of InGaN quantum dots (QDs) by metal-organic vapour phase epitaxy (MOVPE) is described. A thin InGaN epilayer is grown on a GaN buffer layer and then annealed at growth temperature in molecular nitrogen inducing QD formation. The photoluminescence from the dot ensemble is bright and comparable in intensity to that from a quantum well. Micro-photoluminescence studies of these QDs reveal sharp peaks with typical line widths of View the MathML source at View the MathML source. Time-resolved photoluminescence suggests that the excitons in these structures have lifetimes in excess of View the MathML source at View the MathML source.
