Title of article :
Semiconductor nanowires for novel one-dimensional devices
Author/Authors :
L Samuelson، نويسنده , , M.T Bj?rk، نويسنده , , K Deppert، نويسنده , , M Larsson، نويسنده , , B.J Ohlsson، نويسنده , , N Panev، نويسنده , , A.I. Persson، نويسنده , , Magnus E. Skold، نويسنده , , C Thelander، نويسنده , , L.R Wallenberg، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
8
From page :
560
To page :
567
Abstract :
Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, 1D structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor–liquid–solid growth method have made it possible to control not only the dimension and position of nanowires but also to control heterostructures formed inside the nanowires. Based on these techniques we have realized a series of transport devices such as resonant tunneling and single-electron transistors but also optically active single quantum dots positioned inside nanowires displaying sharp emission characteristics due to excitons.
Keywords :
Nanowire , Heterostructure , Resonant tunneling , Coulomb blockade , Quantum dot
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2004
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1051030
Link To Document :
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