Title of article
Nano-probe-assisted technology of indium-nano-dot formation for site-controlled InAs/GaAs quantum dots
Author/Authors
S Ohkouchi، نويسنده , , Y Nakamura، نويسنده , , H Nakamura، نويسنده , , K Asakawa، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
597
To page
600
Abstract
We have successfully and reproducibly fabricated uniform indium (In) nano-dots at a selected point. Nano-dot formation was realized using an atomic force microscope (AFM) probe with a specially designed cantilever, which was equipped with a hollow pyramidal tip with a sub-micron size aperture on the apex and an In-reservoir tank within the stylus. The In nano-dots formed in this study can be directly converted to InAs quantum dots by subsequent irradiation of arsenic flux in the molecular beam epitaxy chamber, which is connected to the AFM chamber through an ultra-high-vacuum tunnel.
Keywords
Site-control , Quantum dot , Atomic force microscope , Nano-probe
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051037
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