Title of article :
Nano-probe-assisted technology of indium-nano-dot formation for site-controlled InAs/GaAs quantum dots
Author/Authors :
S Ohkouchi، نويسنده , , Y Nakamura، نويسنده , , H Nakamura، نويسنده , , K Asakawa، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
4
From page :
597
To page :
600
Abstract :
We have successfully and reproducibly fabricated uniform indium (In) nano-dots at a selected point. Nano-dot formation was realized using an atomic force microscope (AFM) probe with a specially designed cantilever, which was equipped with a hollow pyramidal tip with a sub-micron size aperture on the apex and an In-reservoir tank within the stylus. The In nano-dots formed in this study can be directly converted to InAs quantum dots by subsequent irradiation of arsenic flux in the molecular beam epitaxy chamber, which is connected to the AFM chamber through an ultra-high-vacuum tunnel.
Keywords :
Site-control , Quantum dot , Atomic force microscope , Nano-probe
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2004
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1051037
Link To Document :
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