Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals

Fabrication of high-quality photonic crystals (PCs) is an important issue for precise control of photon propagation. In particular, high aspect ratio, smooth surface, and high uniformity are required to achieve two-dimensional PCs (2DPCs). We report on the fabrication of InP and InGaAs pillar structures on InP substrates by using selective area metal-organic vapor-phase epitaxy (SA-MOVPE) for application to InP-based 2DPCs. This method is very promising as a way to form semiconductor 2DPCs because it makes it possible to obtain PC structures without process-induced damage. To form uniform pillar arrays, we investigated the properties of SA-MOVPE growth on InP (111)A and (111)B substrates. We found that pillar shapes strongly depended on the TBP pressure and growth temperature, and on the optimum growth conditions of uniform pillar structures having {110} vertical side facets.