Electron g factor in a gated InGaAs channel with double InAs-inserted wells

We report the gate-voltage dependence of the electron g factor in InGaAs/InAlAs heterostructures with double InAs-inserted wells. The g factor has been determined from a series of Shubnikov–de Haas oscillations at various angles with respect to the layers under different gate voltages. The strain in InAs layers and the penetration of the electron wave function into InGaAs and InAlAs layers are the important factors of the reduction in the |g| factor. We have also observed the changes of the |g| factor with respect to the gate voltage, though this dependence is not clear in the simple calculation.