Title of article
Internal electric field effect on luminescence properties of ZnO/(Mg,Zn)O quantum wells
Author/Authors
T Makino، نويسنده , , A Ohtomo، نويسنده , , C.H Chia، نويسنده , , Y Segawa، نويسنده , , H Koinuma، نويسنده , , M Kawasaki، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
5
From page
671
To page
675
Abstract
Spectroscopic studies have been conducted for wurtzite ZnO/Mg0.27Zn0.73O multiple quantum wells. Internal electric fields at interfaces are found to have an influence on the photoluminescence (PL) properties for well width (Lw) greater than View the MathML source. These experimentally observed features are characteristic of the quantum-confined Stark effects; the magnitude of the electric field due to spontaneous and piezoelectric polarizations and the depth of the triangle-shaped potential wells are the monotonically increasing functions of Mg concentration and the Lw, respectively. Results of the time-resolved PL study are also presented.
Keywords
Phonon–exciton interactions , Quantum wells , II–VI Semiconductors , Quantum-confined Stark effect
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051052
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