Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure

We measured magneto-photoluminescence (PL) spectra in type-II heterostructures of GaAs/AlAs in high magnetic fields up to View the MathML source under a uniaxial pressure. We observed a remarkable decrease of the integrated magneto-PL intensity with increasing magnetic field at View the MathML source. With increasing temperature or excitation laser power, however, the field-induced decrease of the integrated PL intensity became lesser amount. The experimental observation strongly suggests that electrons and holes are localized in minima of the fluctuating potential due to the interface roughness. We can infer that this is a general feature of the indirect excitons which comprise spatially separated electrons and holes.