Title of article
Observation of clear negative differential resistance characteristics in GaAsNSe/GaAs and GaAsNSb/GaAs multiple quantum wells at room temperature
Author/Authors
K Uesugi، نويسنده , , M Kurimoto، نويسنده , , I Suemune، نويسنده , , M Yamamoto، نويسنده , , T Uemura، نويسنده , , H Machida، نويسنده , , N Shimoyama، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
5
From page
727
To page
731
Abstract
Diodes with GaAsNSb/GaAs multiple quantum wells (MQWs) were grown on p-GaAs(0 0 1) substrates by metalorganic molecular-beam epitaxy. Negative differential resistance (NDR) characteristics were clearly observed at room temperature. The peak-to-valley current ratio was as high as 6 and the peak current density was View the MathML source. The NDR characteristics were also observed for a GaAsNSe/GaAs MQW diode and a GaAsNSe-based tunnel junction diode. The mechanism of the observed NDR is discussed considering the band offsets in the nitrogen-related GaAsNSb/GaAs and GaAsNSe/GaAs MQWs.
Keywords
GaAsNSb , GaAsNSe , Multiple quantum well , Negative differential resistance
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051064
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