Observation of reflection high-energy electron diffraction oscillation during MOMBE growth of AlAs and related modulated semiconductor structures

In situ reflection high-energy electron diffraction (RHEED) oscillation was successfully observed during the MOMBE growth of AlAs for different V/III ratios. At higher V/III ratio the growth mode of AlAs was found to be layer-by-layer growth and thus it resulted in clear and long-period RHEED oscillations. High resolution X-ray diffraction and Hall measurements evidenced the presence of C in the AlGaAs layers and its contribution to p-type conductivity. It was found that the higher V/III ratio reduces the C incorporation in the MOMBE grown AlGaAs layers and lattice matched with GaAs. In such a lattice-matched conditions GaAs/AlAs SPSL were successfully grown with monolayer controlled thickness with the help of RHEED oscillations.