Title of article
Effect of temperature on ballistic transport in InSb quantum wells
Author/Authors
N Goel، نويسنده , , S.J. Chung، نويسنده , , M.B. Santos، نويسنده , , K Suzuki، نويسنده , , S Miyashita، نويسنده , , Y Hirayama، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
761
To page
764
Abstract
Ballistic transport is observed in View the MathML source long four-terminal square structures fabricated from InSb quantum wells with AlxIn1−xSb barriers. Negative bend resistance is observed at temperatures between ∼1.5 and View the MathML source. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.
Keywords
InSb , Quantum well , Ballistic transport , Bend resistance
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051071
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