Title of article
Physics and characteristics of a lateral p–n junction tunneling transistor
Author/Authors
Vladimir Vyurkov، نويسنده , , Victor Ryzhii، نويسنده , , Pablo O. Vaccaro، نويسنده , , Tahito Aida، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
5
From page
867
To page
871
Abstract
The explicit model of a lateral p–n junction tunneling transistor is developed and the current–voltage characteristics are obtained.
Keywords
Tunneling transistor , Quantum well , Lateral p–n junction
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051091
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