Control of ferromagnetism in Mn delta-doped GaAs-based semiconductor heterostructures

The delta (δ)-doping of magnetic atoms (Mn) in semiconductors can provide high concentration of local magnetic moments. We demonstrate the electrical control of ferromagnetism in a Mn δ-doped GaAs-based semiconductor heterostructure at high temperature of 100–View the MathML source. The heterostructure studied here consists of Mn δ-doped GaAs and p-type AlGaAs, where the overlap of the hole wavefunction with the Mn δ-doping profile leads to high ferromagnetic transition temperature TC exceeding View the MathML source. We are able to isothermally change the paramagnetic state to the ferromagnetic state and vice versa, by applying a gate electric field.