Title of article
Influence of bulk inversion asymmetry on the Datta–Das transistor
Author/Authors
A. ?usakowski، نويسنده , , J. Wr?bel، نويسنده , , T. Dietl، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
5
From page
951
To page
955
Abstract
The influence of bulk inversion asymmetry on spin field effect transistor is studied. It is shown that the period of Datta–Das oscillations changes with subband index. The conductance is found to depend significantly on the crystallographic orientation of the device channel. The optimal channel directions in GaAs- and InAs-based devices are determined.
Keywords
Datta–Das transistor , Spin–orbit interaction , Ballistic transport
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051108
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