Electronic and magnetic properties of GaMnAs: annealing effects

The effect of short- and long-time annealing at 250°C on the conductivity, hole density, and Curie temperature of GaMnAs single layers and GaMnAs/InGaMnAs heterostructures is studied by in situ conductivity measurements as well as Raman and superconducting quantum interference device measurements before and after annealing. Whereas the conductivity monotonously increases with increasing annealing time, the hole density and the Curie temperature show a saturation after annealing for View the MathML source. The incorporation of thin InGaMnAs layers drastically enhances the Curie temperature.