Quantum-mechanical displacement sensing using InAs/AlGaSb micromechanical cantilevers

The piezoresistance of an InAs/AlGaSb heterostructure cantilever was measured as a function of magnetic field at a liquid helium temperature. The piezoresistance showed a similar magnetic-field-dependence to that of universal conductance fluctuation, which was observed in a two-terminal resistance of the same device. This result indicates that the quantum-mechanical interference significantly modulates the piezoresistance and clearly demonstrates the possibility of highly sensitive quantum-mechanical displacement sensing, which is promising for future microelctromechanical/nanoelctromechanical applications.