Title of article
Corrections to conductivity on the metallic side of metal–insulator transition in n-Si/SiGe heterostructures
Author/Authors
V. Renard، نويسنده , , E.B. Olshanetky، نويسنده , , Z.D. Kvon، نويسنده , , J.C. Portal، نويسنده , , N.J Woods، نويسنده , , J. Zhang، نويسنده , , J.J Harris، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
256
To page
259
Abstract
We report the first observation of the metal–insulator transition (MIT) in a two-dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero field. We have performed an analysis of the temperature dependence of conductivity and magnetoresistance of our sample on the metallic side of the transition using recent theories.
Keywords
Electron–electron interaction , Two-dimensional electron system , Metal–insulator transition
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051205
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