Title of article :
Corrections to conductivity on the metallic side of metal–insulator transition in n-Si/SiGe heterostructures
Author/Authors :
V. Renard، نويسنده , , E.B. Olshanetky، نويسنده , , Z.D. Kvon، نويسنده , , J.C. Portal، نويسنده , , N.J Woods، نويسنده , , J. Zhang، نويسنده , , J.J Harris، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Abstract :
We report the first observation of the metal–insulator transition (MIT) in a two-dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero field. We have performed an analysis of the temperature dependence of conductivity and magnetoresistance of our sample on the metallic side of the transition using recent theories.
Keywords :
Electron–electron interaction , Two-dimensional electron system , Metal–insulator transition
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
