Magnetoconductivity of a spin-polarized two-dimensional electron gas near the (1 1 1) silicon surface

The magnetoresistance of a disordered and highly interacting two-dimensional electron gas (2DEG) in a silicon (1 1 1) MOSFET has been measured in the presence of a magnetic field parallel to the surface of the 2DEG. For high electronic densities, a linear negative magnetoconductance has been observed. The field of complete spin saturation has been found to depend linearly on the density. From this result, we have determined the g∗m∗ product, which has been shown to decrease as the density is reduced.