• Title of article

    Kondo effect of an antidot in the integer quantum Hall regime: a microscopic calculation

  • Author/Authors

    H.-S. Sim، نويسنده , , N.Y. Hwang، نويسنده , , M. Kataoka، نويسنده , , Hangmo Yi، نويسنده , , M.-S. Choi، نويسنده , , S.-R. Eric Yang، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2004
  • Pages
    4
  • From page
    554
  • To page
    557
  • Abstract
    An electron antidot system is an open geometry problem and often requires heavy calculations to compute its physical properties. Such a difficulty can be avoided by transforming an electron antidot system to a system of hole quantum dot since the transformed system contains only a finite number of confined holes. Using this transformation, we present a microscopic approach to study electronic properties of an antidot in the integer quantum Hall regime. Based on this approach we discuss various conditions under which the Kondo effect may be present.
  • Keywords
    Antidot , Kondo effect , Quantum Hall effect
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2004
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1051278