AFM-defined antidot lattices with top- and back-gate tunability

Antidot lattices with a period of View the MathML source were defined by AFM lithography on a wafer with a back-gate electrode and later covered with a TiAu top-gate. This layout enabled us to study the electronic properties of the lattice at different electron densities and as a function of top- and back-gate voltage at constant Fermi energy. Commensurability peaks and Aharonov–Bohm-type oscillations were observed in the magnetoresistance and characterized under continuously varying conditions. The small lattice constant brings the classical commensurability oscillations to magnetic fields View the MathML source, where quantum effects become important.