Observation of capacitance–voltage oscillations in porous silicon

This paper presents the experimental observation of room temperature capacitance–voltage oscillations in porous silicon (PS). Analysis of the experimental data suggests density-of-states discontinuities in the PS nanostructures to be the likely origins of the oscillations. From the experimental data, a sub-band energy separation of View the MathML source is estimated for the dominant silicon nanostructures. This corresponds to a nanostructure dimension of approximately View the MathML source, which agrees well with the value expected for the PS fabrication conditions.