Title of article
Raman spectrum of array-ordered crystalline silicon nanowires
Author/Authors
Jianxun Liu، نويسنده , , Junjie Niu، نويسنده , , Deren Yang، نويسنده , , Mi Yan، نويسنده , , Jian Sha، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
5
From page
221
To page
225
Abstract
Array-ordered single-crystal silicon nanowires were fabricated by the nanochannel-aluminal and CVD method. The average length and diameter of the nanowires is about 10 μm and 60 nm, respectively. A study of the Raman spectrum of the nanowires shows that the Raman shift to low frequency is due to the quantum confinement effect, which is discussed by using the phonon confinement model. Also we determine the peaks of the Raman spectrum to be corresponding to that of crystal silicon (c-Si).
Keywords
Raman spectra , Phonon confinement model , Nanowires
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051372
Link To Document