A double-walled carbon nanotube field-effect transistor using the inner shell as its gate

Based on the low inter-shell conductance, we propose a design of the carbon nanotube (NT) field-effect transistor (FET), made of a hybrid double-walled carbon nanotube (DWNT) with the semiconducting outer shell as the conductance channel and the inner shell as the gate. Its performance at room temperature is analyzed according to the ballistic transport theory. Because the separation between the two shells of the DWNT is only View the MathML source, this NT FET performs better than the present NT FETs and the ballistic MOSFETs because of its better gate control.