Site selective growth of Ge quantum dots on AFM-patterned Si substrates

By combining the atomic force microscope (AFM) local anodic oxidation and etching, a periodic array of nanodimples of View the MathML source in diameter and View the MathML source in depth has been made on a Si surface. Ge atoms deposited onto this patterned substrate by the MBE method nucleate preferentially in the dimples and form an array of nano Ge dots of about View the MathML source in diameter and View the MathML source in height.